Fig. 2 | npj Quantum Information

Fig. 2

From: Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

Fig. 2

a Schematic diagram of the single-photon electroluminescence process for the SiC-SF defect in 4H-SiC. |e0>, |g0>, |s0> denote the excited, ground, and shelving states of the neutral SiC-SF center, respectively. |g+> is the only (ground) state of the positively charged SiC-SF center. Arrows indicate transitions among different states of the color center. Transition rates are shown next to each arrow. b Illustration of the electron capture process by the positively charged color center. rT is the Thomson radius

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