Fig. 3 | npj Flexible Electronics

Fig. 3

From: Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

Fig. 3

a Representative plots of the transfer characteristics of transistors based on un-doped and doped P(NDI2OD-T2) at VD = 60 V; b dependence of saturation (hollow triangle) and linear (filled triangle) mobility, and threshold voltage (hollow square) on doping equivalents of TBAF. The central symbol denotes the average level, and the upper and lower limit indicates standard deviation

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