Fig. 6 | npj Flexible Electronics

Fig. 6

From: High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

Fig. 6

Device characteristics of NPN BJT a Collector current (I CE)–voltage (V CE) of the NPN BJTs with different base current (I B) from 40 to 140 nA with 20 nA increments. b Gummel plot and current gain (β) plot showing a maximum DC gain of 143 at V CE of 1 V. c Current gain (β) as a function of the collector current density. d Changes in current gain (β) under bending conditions up to 1.08 % of strain

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