Fig. 4 | npj Flexible Electronics

Fig. 4

From: High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

Fig. 4

Device characteristics of PMOS TFT a Drain current (I DS)–voltage (V DS) characteristics with different V GS values ranging from 0 V to −2.5 V with 0.5 V increments. b Drain current (I DS) and transconductance (g m) curves with a drain bias of 50 mV and a V GS ranging from 0.5 V to −3.5 V. c Transconductance (g m) with respect to applied strain at a fixed voltage bias point of V GS = −1 V and V DS = −3 V. d Current gain (h 21 ) and unilateral power gain (U-gain) as a function of frequency from 45 MHz to 20 GHz

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