Fig. 3 | npj Flexible Electronics

Fig. 3

From: High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

Fig. 3

Device characteristics of NMOS TFT a Drain current (I DS)–voltage (V DS) characteristics with different V GS values ranging from 0 V to 2.5 V with 0.5 V increments. b Drain current (I DS) and transconductance (g m) curves with a drain bias of 50 mV and a V GS ranging from –0.5 V to 3.5 V. c Transconductance (g m) with respect to applied strain at a fixed voltage bias point of V GS = 1 V and V DS = 3 V. d Current gain (h 21 ) and unilateral power gain (U-gain) as a function of frequency from 45 MHz to 20 GHz

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