Correction to: npj Computational Materials https://doi.org/10.1038/s41524-020-0293-x, published online 20 March 2020
The original version of this Article contained an error in the spelling of the last word of the Title. This error has been corrected in both the PDF and HTML versions of the Article.
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Ueda, A., Zhang, Y., Sano, N. et al. Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors. npj Comput Mater 6, 37 (2020). https://doi.org/10.1038/s41524-020-0314-9
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DOI: https://doi.org/10.1038/s41524-020-0314-9
