Fig. 1: Potential configurations of BAs in semiconductor devices. | npj Computational Materials

Fig. 1: Potential configurations of BAs in semiconductor devices.

From: Boron arsenide heterostructures: lattice-matched heterointerfaces and strain effects on band alignments and mobility

Fig. 1

a Epitaxially grown BAs thin film as part of a transistor. Epitaxially straining BAs (inset) increases both the electron and the hole mobility. b Schematic of an optoelectronic device utilizing the junction between a thermally conducting BAs substrate for efficient heat extraction in conjunction with nearly lattice-matched direct-band-gap semiconductor films for efficient light emission and absorption.

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