Fig. 4: Electronic structure and FNAHE of trilayer WTe2. | npj Computational Materials

Fig. 4: Electronic structure and FNAHE of trilayer WTe2.

From: Ferroelectric nonlinear anomalous Hall effect in few-layer WTe2

Fig. 4

a, b Band structure of trilayer WTe2 in −iFE and +iFE state, respectively. Both are color-coded by the z-component of intraband Berry curvature \({\mathrm{\Omega }}_n^z\left( {\boldsymbol{k}} \right)\). c, d BCD tensor elements \(D_{yz}^{{\mathrm{intra}}}\left( \mu \right)\) and \(D_{yz}^{{\mathrm{C}},{\mathrm{inter}}}\left( {\mu ,\omega } \right)\), and SD tensor element \(D_{xy}^{{\mathrm{L}},{\mathrm{inter}}}\left( {\mu ,\omega } \right)\) as function of chemical potential μ for −iFE and +iFE state, respectively. For interband BCD and SD, ω is set to 120 meV. e, f k-dependent distribution of intraband Berry curvature \({\mathrm{\Omega }}_{{\mathrm{occ}}}^{z,{\mathrm{intra}}}\left( {\boldsymbol{k}} \right)\) at μ = ±50 meV for −iFE and +iFE state, respectively. g, h k-dependent distribution interband Berry curvature \({\mathrm{\Omega }}_{nm}^{z,{\mathrm{inter}}}\left( {\boldsymbol{k}} \right)\) between (VBM-1,CBM) around the Fermi surface for −iFE and +iFE state, respectively. The results clearly show that nonlinear anomalous Hall current in trilayer WTe2 will switch sign upon ferroelectric transition, in direct contrast to the bilayer case.

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