Fig. 4: Switching speed of HP RSM. | Nature Communications

Fig. 4: Switching speed of HP RSM.

From: Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory

Fig. 4

IV characteristics of dimer-Cs3Sb2I9 RSM before and after application of (a) set pulse (6 V, 20 ns) and (b) reset pulse (−6 V, 20 ns). c Resistance changes of dimer-Cs3Sb2I9 RSM device with different pulse widths. Amplitudes of applied voltage pulses are fixed for set (6 V) and reset (−6 V) processes. d Resistance changes of dimer-Cs3Sb2I9 RSM and layer-Cs3Sb2I9 RSM devices by application of set pulses (6 V) with different pulse widths. ΔR is defined as the ratio between initial resistance and changed resistance after pulse application.

Back to article page