Fig. 1: Example of an outstanding variability analysis of multiple parameters of hundreds of MoS2 FETs, which furthermore are grown using a scalable method (i.e. CVD). | Nature Communications

Fig. 1: Example of an outstanding variability analysis of multiple parameters of hundreds of MoS2 FETs, which furthermore are grown using a scalable method (i.e. CVD).

From: Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices

Fig. 1

a shows the value of VTH for both the linear extrapolation (blue) and constant-current (red) methods, b shows the value of nt, c the value of the hysteresis, d the IMAX/IMIN ratio, and e, f the values of the mobility extracted from the field-effect approach and the Y-function approach (respectively). Reproduced with permission from ref. 9 Copyright American Chemical Society, 2017.

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