Table 1 Comparison of recent ISFETs in literature.

From: Selective ion sensing with high resolution large area graphene field effect transistor arrays

Channel materialTarget ionSensitivity (mV per decade)Resolution (log concentration (M)).
Si1,15,16H+581, 4115, 46160.021, 0.0816
Si nanowires19,20,21H+4819, 40210.0521
Si FET + BJT22H+20220.00522
AlGaN/GaN23,24\({{\rm{NH}}}_{4}^{+}\)5523>0.224
MoS225H+58.70.02
InN27H+58.30.03
Carbon nanotube28K+>0.06
Graphene18,34H+, K+5518, 37340.000318, 0.00234