Fig. 3: Electrical performance of the SPD. | Nature Communications

Fig. 3: Electrical performance of the SPD.

From: Strain-controlled power devices as inspired by human reflex

Fig. 3

a Output (IdsVds) characteristics of the SPD as the Vgs ranging from −5 V to 1 V at a step of 1 V. b Transfer (IdsVgs) characteristics and the transconductance of the SPD measured at Vds = 6 V. c Spatial Raman spectra of the AlGaN/AlN/GaN heterostructures before (HEMT) and after (SPD) dry-etching for the cantilever structure. d, e Output characteristics of the SPD under external strain from 0–16 mN, with the gate voltage Vgs of (d) −5 V and (e) 1 V, respectively. The inset of (e) illustrates the strain distribution of the SPD under an external strain of 16 mN, which is simulated by COMSOL Multiphysics. f The transconductance characteristics of the SPD under various external strain (0 mN, 4 mN, and 16 mN).

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