Fig. 4: Inter-dot carrier transfer in blend CQD films. | Nature Communications

Fig. 4: Inter-dot carrier transfer in blend CQD films.

From: Cascade surface modification of colloidal quantum dot inks enables efficient bulk homojunction photovoltaics

Fig. 4

a, b Schematic illustration of photoexcited carrier transfer in n-type (Eg = 980 nm)–n-type (Eg = 1090 nm) blend CQD film (a), and p-type (Eg = 980 nm)–n-type (Eg = 1090 nm) blend film (b), when narrower Eg CQDs are selectively populated by pump. c, d Transient absorption (TA) maps reveal that blending the same type of CQDs does not show carrier transfer due to type-I heterojunction formation (c), whereas blending different types of CQDs exhibits hole transfer owing to formation of type-II heterojunction (d). e, f TA spectral kinetic traces of bandedge exciton bleaching signals at each Eg position for (c) and (d), respectively.

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