Fig. 1 | Nature Communications

Fig. 1

From: ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Fig. 1

Zinc oxide (ZnO) composite nanolayer with mobility edge quantization through resonant hybridization. a Schematic image of an organic-inorganic hybrid superlattice thin film. Cross-sectional transmission electron microscopic (TEM) images of the hybrid superlattice and the ZnO nanolayer in the superlattice. Yellow circles with dotted lines along the ZnO nanolayer represent ZnO quantum dots (QDs). b Schematic illustration of resonant hybridization of quantized energy levels of ZnO QDs with localized levels of amorphous ZnO for the composite ZnO nanolayer. c Schematic diagram of the total density of states for the composite ZnO nanolayer in the hybrid superlattice. d Photograph of the integrated multi-value logic transistor arrays on 4-inch Si wafers with 300-nm thick SiO2. The schematic structure in the right red box is a unit transistor containing the hybrid superlattice thin films e Linear-scale transfer characteristics of a binary transistor with a single ZnO nanolayer in quantum well structures. A schematic of the structure of an active layer in the transistor is provided in the image inset. f Linear-scale transfer characteristics of a quaternary transistor with the triple ZnO nanolayers. A schematic of the structure of the active layer in the transistor is provided in the image inset

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