Fig. 8 | Nature Communications

Fig. 8

From: Silicon as a ubiquitous contaminant in graphene derivatives with significant impact on device performance

Fig. 8

The effect of silicon contamination on the device performance. a Dynamic response. The green line is the baseline absorption/desorption of a bare Ti-based QCM device. b Calibration curve of relative humidity sensors towards humidity concentrations from 2.5 to 90% RH @ 27 °C. c The effect of temperature on the sensor response as a function of GO purity (50 % RH). d Evaluation of the selectivity of the GO-based sensor (99.9% purity) following exposure to five different interference gases (ammonia, acetaldehyde, ethylmercaptan, dimethyl disulphide and methylethylketone). Following the exposure to the interfering gases, there was no noticeable change in all sensor responses. e Double-layer supercapacitor performance of the reduced GO electrodes for the three different materials. The representative cyclic voltammograms (CVs) that were obtained using a two-electrode cell at 100 mV/s and using a 1 M H2SO4 electrolyte; f CV of the rGO electrode made from 99.9% purity graphite as a function of scan rates

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