Fig. 5 | Nature Communications

Fig. 5

From: Electron aspirator using electron–electron scattering in nanoscale silicon

Fig. 5

Comparison between the transistor-mode and aspirator-mode characteristics. The collector current IC and the base current IB as a function of the emitter gate voltage VEG. The solid and dotted lines show the current curves in the aspirator-mode and transistor-mode, respectively. The collector (corresponding to the drain of the transistor) and the base currents are shown in red and blue, respectively. The RA/T is shown in black. The measurement setup for the aspirator- and transistor-modes are also shown. The arrows show the direction of the electron flow. a Measurement data with the collector and the substrate (back) gates being biased at VCG = 0.36 V and VSG = − 15 V. b Voltage setup for data shown in a. c Measurement data with the collector and the substrate gates being grounded. d Voltage setup for data shown in c

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