Fig. 4 | Nature Communications

Fig. 4

From: A gate-free monolayer WSe2 pn diode

Fig. 4

The SEM images of the devices for electrical transport measurements and their corresponding IV curves. Measurements of electrical transport of a pn homojunction in WSe2/BFO devices. a SEM image for a WSe2 homojunction (Diode-T) from a top view of the junction. b Current measured as a function of voltage for the pn WSe2 junctions on BFO (~30 nm, Diode-T) and thicker BFO (~60 nm, Diode-H) layers. The fits of the Shockley equation with extended series resistance at the forward-bias region give the ideality factor n and series resistance Rs of WSe2 diodes on thin (~30 nm, Diode-T) and thick (~60 nm, Diode-H) BFO layers. Both scale bars in the SEM images are 10 μm

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