Fig. 3 | Nature Communications

Fig. 3

From: Large-area and bright pulsed electroluminescence in monolayer semiconductors

Fig. 3

Contact and voltage dependence. a EL from WSe2 devices fabricated using various source contacts. Error bars indicate standard deviation of EL intensity measured from five or more different devices. b IdVg characteristics of WSe2 devices contacted by Ag, Ni, and few-layer graphene source electrodes. c Voltage dependence of EL for WSe2 and WS2 devices (WS2 before and after superacid treatment). d PL QY and EL internal efficiency measured for a WSe2 device and a superacid-treated WS2 device as a function of injected carrier concentration

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