Fig. 3 | Nature Communications

Fig. 3

From: Stateful characterization of resistive switching TiO2 with electron beam induced currents

Fig. 3

Distribution of energy in device. a Simulated one-dimensional absorption profile in an ReRAM stack for different beam energies. Energy absorbed in the TiO2 layer first rises and then falls with increasing beam energy. Note any energy absorbed in the silicon does not contribute to the measured electron beam-induced current. Arrows indicate regions of energy over which top and bottom electrodes are integrated over for the layer-by-layer energy distributions. bd Monte Carlo simulations on an asymmetric standard structure of absorption in b top layer, c TiO2 layer, and d bottom layer as a function of beam energy summarizing contributions from all elements of the structure

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