Fig. 10 | Nature Communications

Fig. 10

From: Stateful characterization of resistive switching TiO2 with electron beam induced currents

Fig. 10

Reversible electron–hole signals in symmetric device. ad 5 keV electron beam-induced current (EBIC) images of alternating hard changes in polarization observed in symmetric devices. The sign of the measured current is changing since the device built-in field is changing direction as a consequence of programming. ei Gradual movement of a domain wall around a barrier to encompass the entire switching region. j Plot of effect of programming bias on device polarization with increasing amplitude of bias. k Relationship between total EBIC signal and conductance (at 0.1 V) from stepwise transition from e to i. l Cartoon depiction of the polarization domains with a reversal in field concentration from the top electrode to the bottom electrode with distance

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