Table 1 Relevant parameters for all the measured devices before and after the thermal cycle

$${\boldsymbol{I}}_{\bf{C}}^{{\bf{before}}}$$ $${\boldsymbol{I}}_{\bf {C}}^{{{\bf after}}}$$ $${\boldsymbol{R}}_{{\bf N}}^{{{\bf before}}}$$ $${\boldsymbol{R}}_{{\bf N}}^{{{\bf after}}}$$ $${\boldsymbol{I}}_{{\bf C}}{\boldsymbol{R}}_{{\bf N}}^{{{\bf before}}}$$ $${\boldsymbol{I}}_{{\bf C}}{\boldsymbol{R}}_{{\bf N}}^{{{\bf after}}}$$ w L $$\frac{{{\boldsymbol{I}}_{{\bf C}}^{{{\bf after}}}}}{{{\boldsymbol{I}}_{{\bf C}}^{{{\bf before}}}}}$$ $$\frac{{{\boldsymbol{R}}_{{\bf N}}^{{{\bf after}}}}}{{{\boldsymbol{R}}_{{\bf N}}^{{{\bf before}}}}}$$
Device (μA) (μA) (Ω) (Ω) (μeV) (μeV) (μm) (nm)
JM10 2.6 0.002 36 215 89 0.4 1 200 0.07% 6.0
JM5 0.017 216 3.6 0.5 100
JM11 1.8 0.085 41 62 47 5 1 300 4% 1.5
SF2 0.58 0 15 20 9 0 2 100 0% 1.3
JM1 0.6 86 54 0.5 200
SM4 9.3 0.060 17 61 144 8.6 1.5 100 0.6% 3.6
SD3 0.36 0.040 18 53 6 2 2 250 11% 2.9
SF3 2.2 0.030 10 25 22 0.7 2 100 1.4% 2.5
SF8 3.2 0.180 11 25 35 4.5 2 100 5.6% 2.3
SD4 0.6 0.02 32 52 (59) 2 1 2 250 3% 1.6
SF4 19.8 6.600 3.6 5.6 6 100 33% 1.5
SD2 0.52 0.012 17 20 (73) 9 0.2 4 250 2.3% 1.2
SD1 1.2 0.086 27 30 32 2.5 2 250 7.1% 1.1
SM1 11.0 15 151 1.5 100
1. The critical current I C, the normal resistance (measured above gap) R N, the I C R N product, the width of the device w (in case of a SQUID twice the junction) and the distance between the electrodes L are reported. Devices JM10, JM5, SM4, SF8, and SD1 showed inverted magnetic patterns in the second cool down. The devices JM10 and JM5 are discussed in the text. The junctions start with a J in the device name, whereas the SQUIDs device names start with an S