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Synthesis of electron deficient semiconducting polymers for intrinsically stretchable n-type semiconducting materials

Abstract

In the future Internet of Everything (IoE) society, wearable intelligent electronic devices will receive much attention. Semiconducting polymer materials with good stress-releasing properties have been sought for development of novel intrinsically stretchable semiconducting materials that possess excellent mechanical properties and endurance toward applied strains. Recently, strategies for modulating π-conjugated polymers have been developed to produce intrinsically stretchable semiconducting materials possessing excellent electronic and stress-releasing properties. Indeed, intrinsically stretchable “p-type” semiconducting polymer materials have been developed based on both main-chain engineering and side-chain engineering. However, only a few examples of intrinsically stretchable “n-type” semiconducting polymer materials have been reported. In this focus review, our recent progress in main-chain engineering for development of intrinsically stretchable n-type semiconducting materials is described. The topics include four strategies, namely, (i) a conjugation-break spacer approach, (ii) a block copolymer approach, (iii) an all-conjugated statistical terpolymer approach, and (iv) a sequence random copolymer approach, in which specially designed stress-relaxation units or sequences are incorporated along the main chains of naphthalene-diimide-based n-type semiconducting polymers.

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Acknowledgements

TH thanks the Japan Society for the Promotion of Science (JSPS), KAKENHI (No. 21H02009) and Tokuyama Science Foundation for financial support.

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Matsuda, M., Sato, Ki., Terayama, K. et al. Synthesis of electron deficient semiconducting polymers for intrinsically stretchable n-type semiconducting materials. Polym J (2022). https://doi.org/10.1038/s41428-022-00729-6

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