Fig. 1 | Light: Science & Applications

Fig. 1

From: Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy

Fig. 1

a Scanning electron microscopy (SEM) images of InAs NW field-effect transistors labelled NW1 and NW2, with source (S), drain (D), and gate (G) contacts indicated. b The conductivity σ of NW1 (black line) and NW2 (red line) measured at room temperature applying drain-to -source voltage of VDS = 2 mV for NW1 and VDS = 5 mV for NW2, reported as a function of the gate voltage VG.

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