Norbornene copolymers having derivatives of lithocholic acid were synthesized as matrix polymers for 193-nm lithography. Norbornene with a succinic acid ester group was introduced into the matrix polymers in order to improve adhesion to a silicon substrate without causing cross-linking during the post-exposure bake process. Dry-etching resistances of the polymers to CF4-reactive ion etching are comparable to that of poly(4-hydroxystyrene), a typical matrix resin for 248-nm lithography. The resists formulated with the polymers gave 0.15 μm line and space patterns at a dose of 14 mJ/cm2 using an ArF excimer laser stepper and a standard 2.38 wt% tetramethylammonium hydroxide aqueous solution.
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Kim, JB., Ko, JS., Jang, JH. et al. Adhesion Enhancement of Norbornene Polymers with Lithocholate Substituents for 193-nm Resists. Polym J 36, 18–22 (2004). https://doi.org/10.1295/polymj.36.18
- Lithocholic Acid
- 193-nm Resist