Abstract
Norbornene copolymers having derivatives of lithocholic acid were synthesized as matrix polymers for 193-nm lithography. Norbornene with a succinic acid ester group was introduced into the matrix polymers in order to improve adhesion to a silicon substrate without causing cross-linking during the post-exposure bake process. Dry-etching resistances of the polymers to CF4-reactive ion etching are comparable to that of poly(4-hydroxystyrene), a typical matrix resin for 248-nm lithography. The resists formulated with the polymers gave 0.15 μm line and space patterns at a dose of 14 mJ/cm2 using an ArF excimer laser stepper and a standard 2.38 wt% tetramethylammonium hydroxide aqueous solution.
References
E. Reichmanis, F. M. Houlihan, O. Nalamasu, and T. X. Neenan, Chem. Mater., 3, 394, (1991).
H. Ito and M. Ueda, Macromolecules, 21, 1475 (1988).
J. Kim, B. Lee, H. Yun, and Y. Kwon, Chem. Lett., 4, 414 (2000).
J. Kim, H. Yun, Y. Kwon, and B. Lee, Polymer, 41, 8035 (2000).
K. Nakano, K. Maeda, S. Iwasa, and E. Hasegawa, J. Photopolym. Sci. Technol., 10, 561 (1997).
Y. Tsuchiya, T. Hattori, R. Yamanaka, and H. Shiraishi, J. Photopolym. Sci. Technol., 10, 579 (1997).
J. Dekar and N. Hacker, J. Am. Chem. Soc., 113, 6004 (1990).
R. Bonar-Law, A. Davis, and J. Sanders, J. Chem. Soc. Perkin Trans. 1, 2245 (1990).
J. Kim, B. Lee, J. Kang, D. Seo, and C. Roh, Polymer, 40, 5213 (1999).
D. Owens and R. Wendt, J. Appl. Polym. Sci., 13, 1741 (1969).
T. Young, Trans. R. Soc., 95, 84 (1805).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kim, JB., Ko, JS., Jang, JH. et al. Adhesion Enhancement of Norbornene Polymers with Lithocholate Substituents for 193-nm Resists. Polym J 36, 18–22 (2004). https://doi.org/10.1295/polymj.36.18
Published:
Issue Date:
DOI: https://doi.org/10.1295/polymj.36.18
Keywords
- Lithocholic Acid
- 193-nm Resist
- Norbornene
