Abstract
We developed a new positive deep UV resist for KrF excimer laser lithography, which is an alkaline-dissolution-inhibition type. It is composed of o-nitrobenzyl cholate as the dissolution inhibitor, poly(p-vinylphenol) as the alkali-soluble polymer and cyclohexanone as the coating solvent. 0.35 μm line-and-space patterns in 1.0 μm thickness were successfully fabricated using this new resist. It was found that the new resist still has a large absorbance for the KrF excimer laser at the resist surface. However, it has superior capability of resolution.
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K. Jain, C. G. Willson, and B. J. Lin, IBM J. Res. Dev., 26, 151 (1982).
V. Pol, J. H. Bennewitz, G. C. Escher, M. Feldman, V. A. Firtion, T. E. Jewell, B. E. Wilcomb, and J. T. Clemens, Proc. SPIE, 631, 6 (1986).
M. Sasago, M. Endo, Y. Hirai, K. Ogawa, and T. Ishihara, presented at International Electron Devices Meeting, Los Angeles, December 5–8, 1986, p 316.
M. Nakase, T. Sato, M. Nonaka, I. Higashikawa, and Y. Horiike, Proc. SPIE, 773, 226 (1987).
M. Endo, M. Sasago, Y. Hirai, K. Ogawa, and T. Ishihara, Proc. SPIE, 774, 138 (1987).
M. Endo, M. Sasago, H. Nakagawa, Y. Hirai, K. Ogawa, and T. Ishihara, Denshijohotsushin Gakkai Ronbunshi, C, J71-C, 195 (1988).
T. M. Wolf, R. L. Hartless, A. Shugard, and G. N. Taylor, J. Vac. Sci. Technol., B5, 396 (1987).
M. Endo, M. Sasago, Y. Hirai, K. Ogawa, and T. Ishihara, presented at IUPAC 32nd International Symposium on Macromolecules, Kyoto, August 1–6, 1988, p 540.
E. Reichmanis, C. W. Wilkins, Jr., and E. A. Chandross, J. Vac. Sci. Technol., 19, 1338 (1981).
E. Reichmanis, C. W. Wilkins, Jr., D. A. Price, and E. A. Chandross, J. Electrochem. Soc., 130, 1433 (1983).
T. Iwayanagi, T. Kohashi, S. Nonogaki, T. Matsuzawa, K. Douta, and H. Yanazawa, IEEE Trans. Electron Devices, ED-28, 1306 (1981).
C. G. Willson, H. Ito, J. M. J. Fréchet, T. G. Tessier, and F. M. Houlihan, J. Electrochem. Soc., 133, 181 (1986).
P. M. Kochergin and K. S. Bushueva, Zh. Obshch. Khim., 32, 3033 (1962).
F. Cortese and L. Bauman, J. Am. Chem. Soc., 57, 1393 (1935).
H. Nakagawa, M. Sasago, M. Endo, Y. Hirai, K. Ogawa, and T. Ishihara, Proc. SPIE, 922, 400 (1988).
L. F. Thompson, Solid State Technol., 17(7), 27 (1974).
M. Endo, Y. Tani, M. Sasago, K. Ogawa, and N. Nomura, presented at the 20th (1988 International) Conference on Solid State Devices and Materials, Tokyo, August 20–23, 1988, p 557.
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Endo, M., Tani, Y., Sasago, M. et al. o-Nitrobenzyl Ester Based Deep UV Resist for KrF Excimer Laser Lithography. Polym J 21, 603–607 (1989). https://doi.org/10.1295/polymj.21.603
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DOI: https://doi.org/10.1295/polymj.21.603