Abstract
The rate at which excited charge carriers relax to their equilibrium state affects many aspects of the performance of nanoscale devices, including switching speed, carrier mobility and luminescence efficiency. A better understanding of the processes that govern carrier relaxation therefore has important technological implications. A significant increase in carrier–carrier interactions caused by strong spatial confinement of electronic excitations in semiconductor nanostructures leads to a considerable enhancement of Auger effects, which can further result in unusual, Auger-process-controlled recombination and energy relaxation regimes. Here, we report the first experimental observation of efficient Auger heating in CdSe quantum rods at high pump intensities, leading to a strong reduction of carrier cooling rates. In this regime, the carrier temperature is determined by the balance between energy outflow through phonon emission and energy inflow because of Auger heating. This equilibrium results in peculiar carrier cooling dynamics that closely correlate with recombination dynamics, an effect never seen before in bulk or nanoscale semiconductors.
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Acknowledgements
The authors thank Dr. H. Htoon for useful discussions. This work was supported by Los Alamos LDRD Funds and the Chemical Sciences, Biosciences, and Geosciences Division of the Office of Basic Energy Sciences, Office of Science, U.S. Department of Energy.
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Achermann, M., Bartko, A., Hollingsworth, J. et al. The effect of Auger heating on intraband carrier relaxation in semiconductor quantum rods. Nature Phys 2, 557–561 (2006). https://doi.org/10.1038/nphys363
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DOI: https://doi.org/10.1038/nphys363
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