On cooling, transition metal oxides often undergo a phase change from an electrically conducting to an insulating state. Now it is shown that the metal–insulator transition temperature of vanadium dioxide thin films can be controlled by applying strain.
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Electrical Transition in Isostructural VO2 Thin-Film Heterostructures
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References
Mott, N. Rev. Mod. Phys. 40, 677–683 (1968).
Imada, M., Fujimori, A. & Tokura, Y. Rev. Mod. Phys. 70, 1039–1263 (1998).
Mott, N. F. Philos. Mag. 6, 287–309 (1961).
Morin, F. J. Phys. Rev. Lett. 3, 34–36 (1959).
Aetukuri, N. B. et al. Nature Phys. 9, 661–666 (2013).
Goodenough, J. B. J. Solid State. Chem. 3, 490–500 (1971).
Haverkort, M. W. et al. Phys. Rev. Lett. 95, 196404 (2005).
Pouget, J. P. et al. Phys. Rev. B 10, 1801–1815 (1974).
Chakhalian, J. et al. Nature Phys. 2, 244–248 (2006).
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Mizokawa, T. Orbital control. Nature Phys 9, 612–613 (2013). https://doi.org/10.1038/nphys2769
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DOI: https://doi.org/10.1038/nphys2769
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