Abstract
The electronic structure of self-assembled semiconductor quantum dots consists of discrete atom-like states that can be populated with a well-defined number of electrons. This property can be used to fabricate a d.c. current standard that enables the unit of ampere to be independently defined. Here we report an optically pumped current source based on self-assembled InAs/GaAs quantum dots. The accuracy obtained so far is 10−1 and is limited by the uncertainty in the number of dots. At 10 K the device generates a current difference of 2.39 nA at a frequency of 1 kHz. The accuracy could be improved by site-selective growth techniques where the number of dots is fixed by pre-patterning. The results are promising for applications in electrical metrology, where a current standard is needed to close the so-called quantum metrological triangle.
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References
Piquemal, F. et al. Fundamental electrical standards and the quantum metrological triangle. C. R. Physique 5, 857–879 (2004).
Josephson, B. D. Possible new effects in superconductive tunnelling. Phys. Lett. 1, 251–253 (1962).
von Klitzing, K., Dorda, G. & Pepper, M. New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance. Phys. Rev. Lett. 45, 494–497 (1980).
Flowers, J. The route to atomic and quantum standards. Science 306, 1324–1330 (2004).
Pothier, H., Lafarge, P., Esteve, D., Urbina, C. & Devoret, M. H. Passing electrons one by one: Is a 10−8 accuracy achievable? IEEE Trans. Instrum. Meas. 42, 324–330 (2004).
Geerligs, L. J. et al. Frequency-locked turnstile device for single electrons. Phys. Rev. Lett. 64, 2691–2694 (1990).
Keller, M. W., Martinis, J. M., Zimmerman, N. M. & Steinbach, A. H. Accuracy of electron counting using a 7-junction electron pump. Appl. Phys. Lett. 69, 1804–1806 (1996).
Keller, M. W., Eichenberg, A. L., Martinis, J. M. & Zimmerman, N. M. A capacitance standard based on counting electrons. Science 285, 1706–1709 (1999).
Kautz, R. L., Keller, M. K. & Martinis, J. M. Leakage and counting errors in a seven junction electron pump. Phys. Rev. B 60, 8199–8212 (1999).
Vartiainen, J. J., Möttönen, M., Pekola, J. P. & Kemppinen, A. Nanoampere pumping of Cooper pairs. Appl. Phys. Lett. 90, 082102 (2007).
Shilton, J. M. et al. High-frequency single-electron transport in a quasi-one-dimensional GaAs channel induced by surface acoustic waves. J. Phys.: Condens. Matter 8, L531–L539 (1996).
Pekola, J. P. et al. Hybrid single-electron transistor as a source of quantized electric current. Nature Phys. 4, 120–124 (2008).
Maisi, V. F, Pashkin, Y. A, Kafanov, S., Tsai, J. S. & Pekola, J. P. Parallel pumping of electrons. New J. Phys. 11, 113057 (2009).
Kemppinen, A. et al. Experimental investigation of hybrid single-electron turnstiles with high charging energy. Appl. Phys. Lett. 94, 172108 (2009).
Kouwenhoven, L. P., Johnson, A. T., van der Vaart, N. C., Harmans, C. J. P. M. & Foxon, C. T. Quantized current in a quantum-dot turnstile using oscillating tunnel barriers. Phys. Rev. Lett. 67, 1626–1629 (1991).
Blumenthal, M. D. et al. Gigahertz quantized charge pumping. Nature Phys. 3, 343–347 (2007).
Fujiwara, A., Nishiguchi, K. & Ono, Y. Nanoampere charge pumping by single-electron ratchet using silicon nanowire metal–oxide-semiconductor field-effect transistor. Appl. Phys. Lett. 92, 042102 (2008).
Jensen, H. D. & Martinis, J. M. Accuracy of the electron pump. Phys. Rev. B 46, 13407–13427 (1992).
Zimmerman, N. M., Hourdakis, E., Ono, Y., Fujiwara, A. & Takahashi, Y. Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices. J. Appl. Phys. 96, 5254–5266 (2004).
Kashcheyevs, V. & Kaestner, B. Universal decay cascade model dynamic quantum dot initialization. Phys. Rev. Lett. 104, 186805 (2010).
Giblin, S. P. et al. An accurate high-speed single-electron quantum dot pump. New J. Phys. 12, 073013 (2010).
Imamoglu, A. & Yamamoto, Y. Turnstile device for heralded single photons: Coulomb blockade of electron and hole tunnelling in quantum confined p–i–n heterojunctions. Phys. Rev. Lett. 72, 210–213 (1994).
Zrenner, A. et al. Coherent properties of a two-level system based on a quantum-dot photodiode. Nature 418, 612–614 (2002).
Petroff, P. M., Lorke, A. & Imamoglu, A. Epitaxially self-assembled quantum dots. Phys. Today 54, 46–52 (May, 2001).
Liu, H. Y. & Hopkinson, M. Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer. Appl. Phys. Lett. 82, 3644–3646 (2003).
Nevou, L., Liverini, V., Castellano, F., Bismuto, A. & Faist, J. Asymmetric heterostructure for photovoltaic InAs quantum dot infrared photodetector. Appl. Phys. Lett. 97, 023505 (2010).
Paschotta, R. et al. Relative timing jitter measurements with an indirect phase comparison method. Appl. Phys. B 80, 185–192 (2005).
Diddams, S. A., Bergquist, J. C., Jefferts, S. R. & Oates, C. W. Standards of time and frequency at the outset of the 21st century. Science 306, 1318–1324 (2004).
Mohan, A. et al. Record-low inhomogeneous broadening of site-controlled quantum dots for nanophotonics. Small 6, 1268–1272 (2010).
Aivaliotis, P. et al. Two photon absorption in quantum dot-in-a-well infrared photodetectors. Appl. Phys. Lett. 92, 023501 (2008).
Vodopyanov, K. L., Chazapis, V., Phillips, C. C., Sung, B. & Harris, J. S. Intersubband absorption saturation study of narrow III–V multiple quantum wells in the λ=2.8–9 μm spectral range. Semicond. Sci. Technol. 12, 708–714 (1997).
Nishi, K., Saito, H., Sugou, S. & Lee, J. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates. Appl. Phys. Lett. 74, 1111–1113 (1999).
Tchernycheva, M. et al. Intraband absorption of doped GaN/AlN quantum dots at telecommunication wavelengths. Appl. Phys. Lett. 87, 101912 (2005).
Acknowledgements
This work was supported by the Swiss National Foundation under the NCCR project Quantum Photonics. The authors would like to thank Tobias Gresch for providing the QCL used for the pump–probe measurement.
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L.N. carried out the measurements, did the data interpretation and wrote the manuscript. V.L. grew the samples by molecular beam epitaxy, processed the devices, followed the study and wrote the manuscript. F.C. contributed to the data interpretation, modelling and wrote the manuscript. A.B., P.F. and H.S. helped with the experiment. F.G. and E.M. provided the TEM pictures. The idea came from J.F. and all work was done under his supervision.
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Nevou, L., Liverini, V., Friedli, P. et al. Current quantization in an optically driven electron pump based on self-assembled quantum dots. Nature Phys 7, 423–427 (2011). https://doi.org/10.1038/nphys1918
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DOI: https://doi.org/10.1038/nphys1918