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Broadband image sensor array based on graphene–CMOS integration


Integrated circuits based on complementary metal-oxide–semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300–2,000 nm). The demonstrated graphene–CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

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Figure 1: Back-end-of-line CMOS integration of CVD graphene with 388 × 288 pixel image sensor read-out circuit.
Figure 2: Hybrid graphene–CQD-based image sensor and digital camera system.
Figure 3: Electro-optical characterization.
Figure 4: Visible, near-infrared and short-wave infrared sensitivity, and night glow measurement.

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  1. International Technology Roadmap for Semiconductors (2016).

  2. Schwierz, F., Wong, H. & Liou, J. J. Nanometer CMOS (Pan Stanford, 2010).

  3. Theuwissen, A. J. P. CMOS image sensors: state-of-the-art. Solid. State. Electron. 52, 1401–1406 (2008).

    Article  ADS  Google Scholar 

  4. Canon develops APS-H-size CMOS sensor with approximately 250 megapixels, the world's highest pixel count for its size (2015).

  5. Choubey, B. & Gouveia, L. C. P. On evolution of CMOS image sensors. In Proc. 8th Int. Conf. Sensing Technology 89–94 (2014).

    Google Scholar 

  6. Miller, D. B. Rationale and challenges for optical interconnects to electronic chips. Proc. IEEE 88, 728–749 (2000).

    Article  Google Scholar 

  7. Ferrari, A. C. et al. Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. Nanoscale 7, 4598–4810 (2014).

    Article  ADS  Google Scholar 

  8. Pospischil, A. et al. CMOS-compatible graphene photodetector covering all optical communication bands. Nat. Photon. 7, 892–896 (2013).

    Article  ADS  Google Scholar 

  9. Gan, X. et al. Chip-integrated ultrafast graphene photodetector with high responsivity. Nat. Photon. 7, 883–887 (2013).

    Article  ADS  Google Scholar 

  10. Wang, X., Cheng, Z., Xu, K., Tsang, H. K. & Xu, J. High-responsivity graphene/silicon-heterostructure waveguide photodetectors. Nat. Photon. 7, 888–891 (2013).

    Article  ADS  Google Scholar 

  11. Withers, F. et al. Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat. Mater. 14, 301–306 (2015).

    Article  ADS  Google Scholar 

  12. Liu, M. et al. A graphene-based broadband optical modulator. Nature 474, 64–67 (2011).

    Article  ADS  Google Scholar 

  13. Schall, D. et al. 50 GBit/s photodetectors based on wafer-scale graphene for integrated silicon photonic communication systems. ACS Photon. 1, 781–784 (2014).

    Article  Google Scholar 

  14. Koppens, F. H. L. et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotech. 9, 780–793 (2014).

    Article  ADS  Google Scholar 

  15. Guo, W. et al. Oxygen-assisted charge transfer between ZnO quantum dots and graphene. Small 9, 3031–3036 (2013).

    Article  Google Scholar 

  16. Sun, Z. et al. Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity. Adv. Mater. 24, 5878–5883 (2012).

    Article  ADS  Google Scholar 

  17. Konstantatos, G. et al. Hybrid graphene–quantum dot phototransistors with ultrahigh gain. Nat. Nanotech. 7, 363–368 (2012).

    Article  ADS  Google Scholar 

  18. Freitag, M. et al. Photocurrent in graphene harnessed by tunable intrinsic plasmons. Nat. Commun. 4, 1951 (2013).

    Article  ADS  Google Scholar 

  19. Badioli, M. et al. Phonon-mediated mid-infrared photoresponse of graphene. Nano Lett. 14, 6374–6381 (2014).

    Article  ADS  Google Scholar 

  20. Cai, X. et al. Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene. Nat. Nanotech. 9, 814–819 (2014).

    Article  ADS  Google Scholar 

  21. Vicarelli, L. et al. Graphene field-effect transistors as room-temperature terahertz detectors. Nat. Mater. 11, 865–871 (2012).

    Article  ADS  Google Scholar 

  22. Dauber, J. et al. Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride. Appl. Phys. Lett. 106, 193501 (2015).

    Article  ADS  Google Scholar 

  23. Huang, L. et al. Graphene/Si CMOS hybrid Hall integrated circuits. Sci. Rep. 4, 5548 (2014).

    Article  Google Scholar 

  24. Han, S.-J., Garcia, A. V., Oida, S., Jenkins, K. A. & Haensch, W. Graphene radio frequency receiver integrated circuit. Nat. Commun. 5, 3086 (2014).

    Article  ADS  Google Scholar 

  25. Wang, Q. et al. Graphene ‘microdrums’ on a freestanding perforated thin membrane for high sensitivity MEMS pressure sensors. Nanoscale 8, 7663–7671 (2016).

    Article  ADS  Google Scholar 

  26. Pumera, M., Ambrosi, A., Bonanni, A., Chng, E. L. K. & Poh, H. L. Graphene for electrochemical sensing and biosensing. TrAC Trends Anal. Chem. 29, 954–965 (2010).

    Article  Google Scholar 

  27. Smith, A. D. et al. Resistive graphene humidity sensors with rapid and direct electrical readout. Nanoscale 7, 19099–19109 (2015).

    Article  ADS  Google Scholar 

  28. Wu, Y. et al. High-frequency, scaled graphene transistors on diamond-like carbon. Nature 472, 74–78 (2011).

    Article  ADS  Google Scholar 

  29. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotech. 6, 147–150 (2011).

    Article  ADS  Google Scholar 

  30. Li, X. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312–1314 (2009).

    Article  ADS  Google Scholar 

  31. Bonaccorso, F. et al. Production and processing of graphene and 2d crystals. Mater. Today 15, 564–589 (December, 2012).

    Article  Google Scholar 

  32. Rahimi, S. et al. Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors. ACS Nano 8, 10471–10479 (2014).

    Article  MathSciNet  Google Scholar 

  33. Hyperspectral Imaging Systems Market by Application & Component – 2021 (, 2017);

  34. Golic, M., Walsh, K. & Lawson, P. Short-wavelength near-infrared spectra of sucrose, glucose, and fructose with respect to sugar concentration and temperature. Appl. Spectrosc. 57, 139–145 (2003).

    Article  ADS  Google Scholar 

  35. Rauch, T. et al. Near-infrared imaging with quantum-dot-sensitized organic photodiodes. Nat. Photon. 3, 332–336 (2009).

    Article  ADS  Google Scholar 

  36. Hooge, F. N. 1/ƒ noise is no surface effect. Phys. Lett. A 29, 139–140 (1969).

    Article  ADS  Google Scholar 

  37. Ohya, H., Tacano, M., Pavelka, J., Sikula, J. & Musha, T. Ultimate absolute Hooge parameter for semiconductors and graphene. In Int. Conf. Noise and Fluctuations (ICNF) 1–4 (IEEE, 2015).

  38. Nikitskiy, I. et al. Integrating an electrically active colloidal quantum dot photodiode with a graphene phototransistor. Nat. Commun. 7, 11954 (2016).

    Article  ADS  Google Scholar 

  39. Banszerus, L. et al. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper. Sci. Adv. 1, e1500222 (2015).

    Article  ADS  Google Scholar 

  40. Huo, N., Gupta, S. & Konstantatos, G. MoS2–HgTe quantum dot hybrid photodetectors beyond 2 µm. Adv. Mater. 29, 1606576 (2017).

    Article  Google Scholar 

  41. Vatsia, M. L. Atmospheric Optical Environment Research and Development Techincal Report ECOM-7023 (US Army Electronics Command, 1972).

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The authors acknowledge M. Montagut and F. Vialla for creating original artwork. F.K. and G.K. acknowledge financial support from the Spanish Ministry of Economy and Competitiveness, through the ‘Severo Ochoa’ Programme for Centres of Excellence in R&D (SEV-2015–0522), support by Fundacio Cellex Barcelona, and CERCA Programme/Generalitat de Catalunya, from the Government of Catalonia through the SGR grant (2014-SGR-1535) and from the Ajuntament de Barcelona. Furthermore, the research leading to these results has received funding from the European Union Seventh Framework Programme under grant agreement no. 696656 Graphene Flagship and ERC Proof-of-concept GRAQUADOT (reference 620233). G.K. acknowledges financial support from the Spanish Ministry of Economy and Competitiveness (MINECO) and the ‘Fondo Europeo de Desarrollo Regional’ (FEDER) through grant MAT2014-56210-R as well as AGAUR under the SGR grant (2014SGR1548).

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Authors and Affiliations



S.Go planned and supervised the experiments and wrote the manuscript. G.N. designed and fabricated all the devices and performed measurements. C.M. performed measurements and data analysis. S.Gu synthesized materials and contributed to material characterization. J.J.P. developed measurement procedures, and contributed to planning of the experiment. R.P. and G.B. developed fabrication procedures. T.G. and I.N. contributed to device fabrication and characterization. E.P. contributed to measurements. T.L. contributed to the synthesis of materials. A.C., A.P. and A.Z. provided materials. F.K. and G.K. supervised the study and wrote the manuscript. All authors provided input to data analysis, discussed the results and assisted in manuscript preparation.

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Correspondence to Gerasimos Konstantatos or Frank Koppens.

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The authors declare no competing financial interests.

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Goossens, S., Navickaite, G., Monasterio, C. et al. Broadband image sensor array based on graphene–CMOS integration. Nature Photon 11, 366–371 (2017).

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