Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are electrically driven at room temperature1,2. To fully utilize the benefits of large-scale, low-cost manufacturing foundries, it is highly desirable to grow direct bandgap III-V semiconductor lasers directly on Si3,4,5. Here, we report the demonstration of a blue–violet (413 nm) InGaN-based laser diode grown directly on Si that operates under continuous-wave current injection at room temperature, with a threshold current density of 4.7 kA cm–2. The heteroepitaxial growth of GaN on Si is confronted with a large mismatch in both the lattice constant and the coefficient of thermal expansion, often resulting in a high density of defects and even microcrack networks. By inserting an Al-composition step-graded AlN/AlGaN multilayer buffer between the Si and GaN, we have not only successfully eliminated crack formation, but also effectively reduced the dislocation density. The result is the realization of a blue–violet InGaN-based laser on Si.
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Goodman, J. W., Leonberger, F. J., Sun-Yuan, K. & Athale, R. A. Optical interconnections for VLSI systems. Proc. IEEE 72, 850–866 (1984).
Soref, R. The past, present, and future of silicon photonics. IEEE J. Sel. Top. Quantum Elect. 12, 1678–1687 (2006).
Chen, R. et al. Nanolasers grown on silicon. Nature Photon. 5, 170–175 (2011).
Wang, Z. et al. Room-temperature InP distributed feedback laser array directly grown on silicon. Nature Photon. 9, 837–842 (2015).
Chen, S. et al. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nature Photon. 10, 307–311 (2016).
Sun, C. et al. Single-chip microprocessor that communicates directly using light. Nature 528, 534–538 (2015).
Rong, H. S. et al. A continuous-wave Raman silicon laser. Nature 433, 725–728 (2005).
Wirths, S. et al. Lasing in direct-bandgap GeSn alloy grown on Si. Nature Photon. 9, 88–92 (2015).
Liang, D. & Bowers, J. E. Recent progress in lasers on silicon. Nature Photon. 4, 511–517 (2010).
Justice, J. et al. Wafer-scale integration of group III-V lasers on silicon using transfer printing of epitaxial layers. Nature Photon. 6, 612–616 (2012).
Nakamura, S. et al. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates. Appl. Phys. Lett. 72, 2014–2016 (1998).
Bidnyk, S. et al. Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth. Appl. Phys. Lett. 73, 2242–2244 (1998).
Lutsenko, E. V. et al. Growth, stimulated emission, photo- and electroluminescence of InGaN/GaN EL-test heterostructures. Phys. Status Solidi C 0, 272–275 (2002).
Shuhaimi, B. A. B. A., Kawato, H., Zhu, Y. & Egawa, T. Growth of InGaN-based laser diode structure on silicon (111) substrate. J. Phys. Conf. Ser. 152, 012007 (2009).
Kushimoto, M., Tanikawa, T., Honda, Y. & Amano, H. Optically pumped lasing properties of ( ) InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates. Appl. Phys. Express 8, 022702 (2015).
Cherns, D., Henley, S. J. & Ponce, F. A. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence. Appl. Phys. Lett. 78, 2691–2693 (2001).
Cheng, K. et al. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers. J. Electron. Mater. 35, 592–598 (2006).
Leung, B., Han, J. & Sun, Q. Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si(111). Phys. Status Solidi C 11, 437–441 (2014).
Romanov, A. E. & Speck, J. S. Stress relaxation in mismatched layers due to threading dislocation inclination. Appl. Phys. Lett. 83, 2569–2571 (2003).
Follstaedt, D. M., Lee, S. R., Allerman, A. A. & Floro, J. A. Strain relaxation in AlGaN multilayer structures by inclined dislocations. J. Appl. Phys. 105, 083507 (2009).
Heying, B. et al. Role of threading dislocation structure on the X-ray diffraction peak widths in epitaxial GaN films. Appl. Phys. Lett. 68, 643–645 (1996).
Chierchia, R. et al. Microstructure of heteroepitaxial GaN revealed by X-ray diffraction. J. Appl. Phys. 93, 8918–8925 (2003).
Sun, Q. et al. GaN-on-Si blue/white LEDs: epitaxy, chip, and package. J. Semicond. 37, 044006 (2016).
Zhu, D. et al. Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates. J. Appl. Phys. 109, 014502 (2011).
Tomiya, S., Hino, T., Goto, S., Takeya, M. & Ikeda, M. Dislocation related issues in the degradation of GaN-based laser diodes. IEEE J. Sel. Top. Quantum Elect. 10, 1277–1286 (2004).
Nakamura, S. et al. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes. Appl. Phys. Lett. 69, 4056–4058 (1996).
Nakamura, S. et al. High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes. Jpn. J. Appl. Phys. 36, L1059–L1061 (1997).
Nam, O. H. et al. Characteristics of GaN-based laser diodes for post-DVD applications. Phys. Status Solidi A 201, 2717–2720 (2004).
Marona, L. et al. Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals. Appl. Phys. Lett. 88, 201111 (2006).
Nakamura, S. The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes. Science 281, 956–961 (1998).
The authors are grateful for the financial support from the National Key Research and Development Program (Grant No. 2016YFB0400104), the National Natural Science Foundation of China (Grant Nos. 61534007, 61404156, 61522407 and U1501241), the Strategic Priority Research Program of the Chinese Academy of Science (Grant No. XDA09020401), the Natural Science Foundation of Jiangsu Province (Grant No. BK20160401), the China Postdoctoral Science Foundation (Grant No. 2016M591944) and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists (Grant No. 2013T2J0048). This work was also supported by the open fund of the State Key Laboratory of Luminescence and Applications (Grant No. SKLA-2016-01) and the seed fund from SINANO, CAS (Grant No. Y5AAQ51001). We are thankful for the technical support from Nano Fabrication Facility, Platform for Characterization & Test, Nano-X of SINANO, CAS, M. Niu's assistance in TEM imaging and J. Han's help in proofreading.
The authors declare no competing financial interests.
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Sun, Y., Zhou, K., Sun, Q. et al. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si. Nature Photon 10, 595–599 (2016). https://doi.org/10.1038/nphoton.2016.158
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