The ability to directly modulate a nanocavity laser with ultralow power consumption is essential for the realization of a CMOS-integrated, on-chip photonic network, as several thousand lasers must be integrated onto a single chip. Here, we show high-speed direct modulation (3-dB modulation bandwidth of 5.5 GHz) of an ultracompact InP/InGaAsP buried heterostructure photonic-crystal laser at room temperature by optical pumping. The required energy for transmitting one bit is estimated to be 13 fJ. We also achieve a threshold input power of 1.5 µW, which is the lowest observed value for room-temperature continuous-wave operation of any type of laser. The maximum single-mode fibre output power of 0.44 µW is the highest output power, to our knowledge, for photonic-crystal nanocavity lasers under room-temperature continuous-wave operation. Implementing a buried heterostructure leads to excellent device performance, reducing the active region temperature and effectively confining the carriers inside the cavity.
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The authors thank R. Urata, R. Takahashi and K. Kato for their technical support and discussions. We also thank T. Yamanaka and H. Saito for numerical simulation of the thermal relaxation and Y. Shouji for fabricating the device. Part of this work was supported by the National Institute of Information and Communications Technology (NICT).
The authors declare no competing financial interests.
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Matsuo, S., Shinya, A., Kakitsuka, T. et al. High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted. Nature Photon 4, 648–654 (2010). https://doi.org/10.1038/nphoton.2010.177
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