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Semiconductor photonics

Laser diodes go green

Nature Photonics volume 3, pages 432–434 (2009)Cite this article

Researchers at Nichia Corporation have demonstrated green InGaN-based lasers grown on c-plane sapphire, with lifetimes capable of supporting commercial applications.

The demonstration of green semiconductor laser diodes with lifetimes of many thousands of hours1 (similar to that of their blue and red counterparts) holds great promise for the development and miniaturization of full-colour laser projection systems and displays. When optimized and commercially available, such green lasers could enable realization of miniature full-colour projectors that can be integrated into laptop computers and cell phones. This will certainly lead to a new paradigm in the way information is exchanged in meetings and conferences.

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Figure 1: The epilayer structure of an InGaN green laser diode on a c-sapphire substrate.
Figure 2: Quantum efficiency (QE) of InGaN and AlInGaP LEDs as a function of emission wavelength.

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Authors and Affiliations

  1. Asif Khan is in the Department of Electrical Engineering at the University of South Carolina, 300 S. Main Street, Columbia SC 29208, USA. asif@cec.sc.edu,

    Asif Khan

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Khan, A. Laser diodes go green. Nature Photon 3, 432–434 (2009). https://doi.org/10.1038/nphoton.2009.124

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