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Semiconductor photonics

Laser diodes go green

Nature Photonics volume 3, pages 432–434 (2009)Cite this article

Researchers at Nichia Corporation have demonstrated green InGaN-based lasers grown on c-plane sapphire, with lifetimes capable of supporting commercial applications.

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Figure 1: The epilayer structure of an InGaN green laser diode on a c-sapphire substrate.
Figure 2: Quantum efficiency (QE) of InGaN and AlInGaP LEDs as a function of emission wavelength.

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Authors and Affiliations

  1. Asif Khan is in the Department of Electrical Engineering at the University of South Carolina, 300 S. Main Street, Columbia SC 29208, USA. asif@cec.sc.edu,

    Asif Khan

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Khan, A. Laser diodes go green. Nature Photon 3, 432–434 (2009). https://doi.org/10.1038/nphoton.2009.124

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