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Ultraviolet laser diodes

Indium-free success

Nature Photonics volume 2, pages 521–522 (2008)Cite this article

Researchers at Hamamatsu report an indium-free laser diode operating at 342 nm, the shortest wavelength so far for an electrically pumped semiconductor laser diode.

The group III nitrides are a versatile material system for optoelectronic applications, enabling the fabrication of semiconductor light sources that cover the entire visible and near- to deep-UV spectrum. In principle it is easy to tune the emission wavelength of the GaN system — add indium (InN has a bandgap of 0.7 eV) to shift emission towards longer wavelengths, or add aluminium (AlN has a bandgap of 6.2 eV) to move into the UV region.

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Figure 1: An image of visible photoluminescence from Hamamatsu's UV laser diode during operation.

Hamamatsu

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Authors and Affiliations

  1. Ulrich Schwarz is in the Physics Department at the University of Regensburg, Universitätsstraße 31, Regensburg 93053, Germany. uli.schwarz@physik.uni-regensburg.de,

    Ulrich Schwarz

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  1. Ulrich Schwarz
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Schwarz, U. Indium-free success. Nature Photon 2, 521–522 (2008). https://doi.org/10.1038/nphoton.2008.163

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  • DOI: https://doi.org/10.1038/nphoton.2008.163

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