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Memory on the racetrack

Nature Nanotechnology volume 10, pages 195–198 (2015)Cite this article

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Racetrack memory stores digital data in the magnetic domain walls of nanowires. This technology promises to yield information storage devices with high reliability, performance and capacity.

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Figure 1: Three magnetic memory and storage devices.
Figure 2: Evolution of racetrack memory.
Figure 3: Key phenomena that contribute to the current-driven motion of DWs.

References

  1. Parkin, S. S. P. Shiftable magnetic shift register and method of using the same. US patent 6,834,005 (2004).

  2. Parkin, S. S. P., Hayashi, M. & Thomas, L. Science 320, 190–194 (2008).

    Article  CAS  Google Scholar 

  3. Parkin, S. S. P. et al. J. Appl. Phys. 85, 5828–5833 (1999).

    Article  CAS  Google Scholar 

  4. Parkin, S. S. P. et al. Proc. IEEE 91, 661–680 (2003).

    Article  CAS  Google Scholar 

  5. Gallagher, W. J. & Parkin, S. S. P. IBM J. Res. Dev. 50, 5–23 (2006).

    Article  CAS  Google Scholar 

  6. Parkin, S. S. P. et al. Nature Mater. 3, 862–867 (2004).

    Article  CAS  Google Scholar 

  7. Ikeda, S. et al. Nature Mater. 9, 721–724 (2010).

    Article  CAS  Google Scholar 

  8. Ralph, D. C. & Stiles, M. D. J. Magn. Magn. Mater. 320, 1190–1216 (2008).

    Article  CAS  Google Scholar 

  9. Hayashi, M., Thomas, L., Moriya, R., Rettner, C. & Parkin, S. S. P. Science 320, 209–211 (2008).

    Article  CAS  Google Scholar 

  10. Hayashi, M. et al. Phys. Rev. Lett. 98, 037204 (2007).

    Article  Google Scholar 

  11. Vlaminck, V. & Bailleul, M. Science 322, 410–413 (2008).

    Article  CAS  Google Scholar 

  12. Chiba, D. et al. Appl. Phys. Express 3, 073004 (2010).

    Article  Google Scholar 

  13. Thomas, L. et al. Int. Electron Dev. Meeting (IEDM) 24.2.1–24.2.4 (2011).

  14. Miron, I. M. et al. Nature Mater. 10, 419–423 (2011).

    Article  CAS  Google Scholar 

  15. Ryu, K. S., Thomas, L., Yang, S. H. & Parkin, S. S. P. Nature Nanotech. 8, 527–533 (2013).

    Article  CAS  Google Scholar 

  16. Ryu, K. S., Yang, S. H., Thomas, L. & Parkin, S. S. P. Nature Commun. 5, 3910 (2014).

    Article  CAS  Google Scholar 

  17. Fukami, S. et al. Appl. Phys. Lett. 98, 082504 (2011).

    Article  Google Scholar 

  18. Ryu, K. S., Thomas, L., Yang, S. H. & Parkin, S. S. P. Appl. Phys. Express 5, 093006 (2012).

    Article  Google Scholar 

  19. Meckler, S. et al. Phys. Rev. Lett. 103, 157201 (2009).

    Article  CAS  Google Scholar 

  20. Torrejon, J. et al. Preprint available at http://arxiv.org/abs/1308.1751 (2013).

  21. Emori, S., Bauer, U., Ahn, S. M., Martinez, E. & Beach, G. S. D. Nature Mater. 12, 611–616 (2013).

    Article  CAS  Google Scholar 

  22. Crépieux, A. & Lacroix, C. J. Magn. Magn. Mater. 182, 341–349 (1998).

    Article  Google Scholar 

  23. Hirsch, J. E. Phys. Rev. Lett. 83, 1834–1837 (1999).

    Article  CAS  Google Scholar 

  24. D'yakonov, M. I. Int. J. Mod. Phys. B 23, 2556–2565 (2009).

    Article  CAS  Google Scholar 

  25. Yang, S. H., Ryu, K. S. & Parkin, S. S. P. Nature Nanotech. 10, 221–226 (2014).

    Article  Google Scholar 

  26. Parkin, S. S. P., More, N. & Roche, K. P. Phys. Rev. Lett. 64, 2304–2307 (1990).

    Article  CAS  Google Scholar 

  27. Parkin, S. S. P. Phys. Rev. Lett. 67, 3598 (1991).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Stuart Parkin and See-Hun Yang are at IBM Almaden Research Center, San Jose, California 95120, USA,

    Stuart Parkin & See-Hun Yang

  2. Stuart Parkin is also at the Max Planck Institute for Microstructure Physics, Halle (Saale) D-06120, Germany,

    Stuart Parkin

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  1. Stuart Parkin
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  2. See-Hun Yang
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Correspondence to Stuart Parkin.

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Parkin, S., Yang, SH. Memory on the racetrack. Nature Nanotech 10, 195–198 (2015). https://doi.org/10.1038/nnano.2015.41

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