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A new spin on magnetic memories

Solid-state memory devices with all-electrical read and write operations might lead to faster, cheaper information storage.

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Figure 1: STT-MRAM bit cell.
Figure 2: STT-MRAM electrical characteristics.
Figure 3: Write error rate versus the junction bias voltage.

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Acknowledgements

A.D.K. thanks G. Wolf for comments on the manuscript and for preparing Fig. 2. He acknowledges support from the National Science Foundation, grant number NSF-DMR-1309,202. D.C.W. thanks J. DeBrosse for comments on the manuscript.

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Correspondence to Andrew D. Kent or Daniel C. Worledge.

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A.D.K. is the founder of Spin Transfer Technologies.

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Kent, A., Worledge, D. A new spin on magnetic memories. Nature Nanotech 10, 187–191 (2015). https://doi.org/10.1038/nnano.2015.24

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