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Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films


The unique crystalline protection of the surface states in topological crystalline insulators1 has led to a series of predictions of strain-generated phenomena, from the appearance of pseudo-magnetic fields and helical flat bands2 to the tunability of Dirac surface states by strain that may be used to construct ‘straintronic’ nanoswitches3. However, the practical realization of this exotic phenomenology via strain engineering is experimentally challenging and is yet to be achieved. Here, we have designed an experiment to not only generate and measure strain locally, but also to directly measure the resulting effects on Dirac surface states. We grew heteroepitaxial thin films of topological crystalline insulator SnTe in situ and measured them using high-resolution scanning tunnelling microscopy to determine picoscale changes in the atomic positions, which reveal regions of both tensile and compressive strain. Simultaneous Fourier-transform scanning tunnelling spectroscopy was then used to determine the effects of strain on the Dirac electrons. We find that strain continuously tunes the momentum space position of the Dirac points, consistent with theoretical predictions2,3. Our work demonstrates the fundamental mechanism necessary for using topological crystalline insulators in strain-based applications.

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Figure 1: SnTe heteroepitaxial thin films.
Figure 2: Quasiparticle interference (QPI) measurements.
Figure 3: Mapping the local lattice strain.
Figure 4: Strain engineering of the surface states band structure.


  1. Fu, L. Topological crystalline insulators. Phys. Rev. Lett. 106, 106802 (2011).

    Article  Google Scholar 

  2. Tang, E. & Fu, L. Strain-induced partially flat band, helical snake states and interface superconductivity in topological crystalline insulators. Nature Phys. 10, 964–969 (2014).

    Article  CAS  Google Scholar 

  3. Barone, P., Di Sante, D. & Picozzi, S. Strain engineering of topological properties in lead-salt semiconductors. Phys. Status Solidi 7, 1102–1106 (2013).

    CAS  Google Scholar 

  4. Engelmann, J. et al. Strain induced superconductivity in the parent compound BaFe2As2 . Nature Commun. 4, 2877 (2013).

    Article  CAS  Google Scholar 

  5. Hicks, C. W. et al. Strong increase of Tc of Sr2RuO4 under both tensile and compressive strain. Science 344, 283–285 (2014).

    Article  CAS  Google Scholar 

  6. Chu, J.-H. et al. In-plane resistivity anisotropy in an underdoped iron arsenide superconductor. Science 329, 824–826 (2010).

    Article  CAS  Google Scholar 

  7. Liu, W. et al. Anisotropic interactions and strain-induced topological phase transition in Sb2Se3 and Bi2Se3 . Phys. Rev. B 84, 245105 (2011).

    Article  Google Scholar 

  8. Liu, Y. et al. Tuning Dirac states by strain in the topological insulator Bi2Se3 . Nature Phys. 10, 294–299 (2014).

    Article  CAS  Google Scholar 

  9. Liu, Y. et al. Charging Dirac states at antiphase domain boundaries in the three-dimensional topological insulator Bi2Se3 . Phys. Rev. Lett. 110, 186804 (2013).

    Article  CAS  Google Scholar 

  10. Ran, Y., Zhang, Y. & Vishwanath, A. One-dimensional topologically protected modes in topological insulators with lattice dislocations. Nature Phys. 5, 298–303 (2009).

    Article  CAS  Google Scholar 

  11. Teo, J. C. Y. & Kane, C. L. Topological defects and gapless modes in insulators and superconductors. Phys. Rev. B 82, 115120 (2010).

    Article  Google Scholar 

  12. Fu, L., Kane, C. & Mele, E. Topological insulators in three dimensions. Phys. Rev. Lett. 98, 106803 (2007).

    Article  Google Scholar 

  13. Hasan, M. Z. & Kane, C. L. Colloquium: topological insulators. Rev. Mod. Phys. 82, 3045–3067 (2010).

    Article  CAS  Google Scholar 

  14. Qi, X.-L. & Zhang, S.-C. Topological insulators and superconductors. Rev. Mod. Phys. 83, 1057–1110 (2011).

    Article  CAS  Google Scholar 

  15. Tanaka, Y. et al. Tunability of the k-space location of the Dirac cones in the topological crystalline insulator Pb1−xSnxTe. Phys. Rev. B 87, 155105 (2013).

    Article  Google Scholar 

  16. Barone, P. et al. Pressure-induced topological phase transitions in rocksalt chalcogenides. Phys. Rev. B 88, 045207 (2013).

    Article  Google Scholar 

  17. Sun, Y. et al. Rocksalt SnS and SnSe: native topological crystalline insulators. Phys. Rev. B 88, 235122 (2013).

    Article  Google Scholar 

  18. Levy, N. et al. Strain-induced pseudo-magnetic fields greater than 300 tesla in graphene nanobubbles. Science 329, 544–547 (2010).

    Article  CAS  Google Scholar 

  19. Gomes, K. K., Mar, W., Ko, W., Guinea, F. & Manoharan, H. C. Designer Dirac fermions and topological phases in molecular graphene. Nature 483, 306–310 (2012).

    Article  CAS  Google Scholar 

  20. Lu, J., Neto, A. H. C. & Loh, K. P. Transforming Moiré blisters into geometric graphene nano-bubbles. Nature Commun. 3, 823 (2012).

    Article  Google Scholar 

  21. Springholz, G. & Wiesauer, K. Nanoscale dislocation patterning in PbTe/PbSe(001) lattice-mismatched heteroepitaxy. Phys. Rev. Lett. 88, 015507 (2001).

    Article  Google Scholar 

  22. Knox, K. R., Bozin, E. S., Malliakas, C. D., Kanatzidis, M. G. & Billinge, S. J. L. Local off-centering symmetry breaking in the high-temperature regime of SnTe. Phys. Rev. B 89, 014102 (2014).

    Article  Google Scholar 

  23. Zhang, D. et al. Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states. Phys. Rev. B 89, 245445 (2014).

    Article  Google Scholar 

  24. Assaf, B. A. et al. Quantum coherent transport in SnTe topological crystalline insulator thin films. Appl. Phys. Lett. 105, 102108 (2014).

    Article  Google Scholar 

  25. Hoffman, J. E. et al. Imaging quasiparticle interference in Bi2Sr2CaCu2O8+δ . Science 297, 1148–1151 (2002).

    Article  CAS  Google Scholar 

  26. Tanaka, Y. et al. Experimental realization of a topological crystalline insulator in SnTe. Nature Phys. 8, 800–803 (2012).

    Article  CAS  Google Scholar 

  27. Xu, S.-Y. et al. Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe. Nature Commun. 3, 1192 (2012).

    Article  Google Scholar 

  28. Hsieh, T. H. et al. Topological crystalline insulators in the SnTe material class. Nature Commun. 3, 982 (2012).

    Article  Google Scholar 

  29. Liu, J., Duan, W. & Fu, L. Two types of surface states in topological crystalline insulators. Phys. Rev. B 88, 241303 (2013).

    Article  Google Scholar 

  30. Zeljkovic, I. et al. Mapping the unconventional orbital texture in topological crystalline insulators. Nature Phys. 10, 572–577 (2014).

    Article  CAS  Google Scholar 

  31. Lawler, M. J. et al. Intra-unit-cell electronic nematicity of the high-Tc copper-oxide pseudogap states. Nature 466, 347–351 (2010).

    Article  CAS  Google Scholar 

  32. Okada, Y. et al. Ripple-modulated electronic structure of a 3D topological insulator. Nature Commun. 3, 1158 (2012).

    Article  Google Scholar 

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V.M. acknowledges funding from the US Department of Energy, Scanned Probe Division (award no. DE-FG02-12ER46880), to support I.Z., K.L.S., B.A.A. and D.W. for this project. F.C. acknowledges support provided by MOST-Taiwan (project no. NSC-102-2119-M-002-004).

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Authors and Affiliations



I.Z., B.A.A. and V.M. conceived and designed the experiments. I.Z., D.W. and B.A.A. performed the experiments. I.Z., D.W. and K.L.S analysed the data. R.S. and F.C.C. contributed single-crystal substrates. I.Z. and V.M. co-wrote the paper. All authors discussed the results and commented on the manuscript.

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Correspondence to Vidya Madhavan.

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The authors declare no competing financial interests.

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Zeljkovic, I., Walkup, D., Assaf, B. et al. Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films. Nature Nanotech 10, 849–853 (2015).

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