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Magnetic domain walls

Traps with potential

Nature Nanotechnology volume 8, pages 391–392 (2013)Cite this article

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Voltage-controlled traps can halt the motion of fast magnetic domain walls in nanowires.

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Figure 1: A memory device based on voltage-controlled domain-wall trapping.

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Authors and Affiliations

  1. T. J. Hayward and D. A Allwood are at the Department of Materials Science and Engineering, University of Sheffield, Sheffield S1 3JD, UK,

    T. J. Hayward & D. A. Allwood

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  1. T. J. Hayward
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  2. D. A. Allwood
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Correspondence to D. A. Allwood.

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Hayward, T., Allwood, D. Traps with potential. Nature Nanotech 8, 391–392 (2013). https://doi.org/10.1038/nnano.2013.108

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