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Nanoelectronics

A topological twist for transistors

Nature Nanotechnology volume 6, pages 197–198 (2011)Cite this article

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A nanoribbon of a material with topological surface states has been used as the channel in a field-effect transistor.

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Figure 1: A FET in which the channel is a topological insulator nanoribbon7.

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Authors and Affiliations

  1. Qi-Kun Xue is in the Department of Physics, Tsinghua University, Beijing, 100084 China.,

    Qi-Kun Xue

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  1. Qi-Kun Xue
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Correspondence to Qi-Kun Xue.

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Xue, QK. A topological twist for transistors. Nature Nanotech 6, 197–198 (2011). https://doi.org/10.1038/nnano.2011.47

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