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Single-layer MoS2 transistors

Nature Nanotechnology volume 6, pages 147–150 (2011)Cite this article

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Abstract

Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene1,2, both because of its rich physics3,4,5 and its high mobility6. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors7. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films8,9,10,11,12,13 or requires high voltages14,15. Although single layers of MoS2 have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5–3 cm2 V−1 s−1 range17 are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS2 mobility of at least 200 cm2 V−1 s−1, similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 108 and ultralow standby power dissipation. Because monolayer MoS2 has a direct bandgap16,18, it can be used to construct interband tunnel FETs19, which offer lower power consumption than classical transistors. Monolayer MoS2 could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

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Figure 1: Structure and AFM imaging of monolayer MoS2.
Figure 2: Fabrication of MoS2 monolayer transistors.
Figure 3: Characterization of MoS2 monolayer transistors.
Figure 4: Local gate control of the MoS2 monolayer transistor.

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Change history

  • 17 February 2011

    In the version of this Letter originally published online, the label 'Vtg' was missing from Fig. 3a and the expression 'μ = 217 cm-2 Vs' should have read 'μ = 217 cm2 V-1 s-1' in Fig. 3b. These errors have now been corrected in all versions of the Letter.

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Acknowledgements

The authors thank G. Seifert, T. Heine and Y. Paiss for useful discussions. Device fabrication was carried out in part in the EPFL Center for Micro/Nanotechnology (CMI). Thanks go to K. Lister (CMI) for technical support with electron-beam lithography. This work was financially supported by the European Research Council (grant no. 240076, FLATRONICS: electronic devices based on nanolayers).

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Authors and Affiliations

  1. Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland

    B. Radisavljevic, J. Brivio, V. Giacometti & A. Kis

  2. Institute of Biotechnology, Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland

    A. Radenovic

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  1. B. Radisavljevic
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Contributions

B.R., J.B., V.G. and A.K. worked on device fabrication and contact optimization. A.R. built the system for atomic layer deposition of HfO2. B.R. and A.K. performed measurements and analysed the data presented in the paper and Supplementary Information. A.K. initiated the research and wrote the manuscript. All the authors read and commented on the manuscript.

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Correspondence to A. Kis.

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Radisavljevic, B., Radenovic, A., Brivio, J. et al. Single-layer MoS2 transistors. Nature Nanotech 6, 147–150 (2011). https://doi.org/10.1038/nnano.2010.279

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