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Assembly of aligned linear metallic patterns on silicon

Nature Nanotechnology volume 2, pages 500–506 (2007)Cite this article

Abstract

In order to harness the potential of block copolymers to produce nanoscale structures that can be integrated with existing silicon-based technologies, there is a need for compatible chemistries. Block copolymer nanostructures can form a wide variety of two-dimensional patterns, and can be controlled to present long-range order. Here we use the acid-responsive nature of self-assembled monolayers of aligned, horizontal block copolymer cylinders for metal loading with simple aqueous solutions of anionic metal complexes, followed by brief plasma treatment to simultaneously remove the block copolymer and produce metallic nanostructures. Aligned lines of metal with widths on the order of 10 nm and less are efficiently produced by means of this approach on Si(100) interfaces. The method is highly versatile because the chemistry to manipulate nanowire composition, structure and choice of semiconductor is under the control of the user.

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Figure 1: Schema of the self-assembly process for monolayers of horizontal, cylindrical PS-b-P2VP block copolymers on surfaces.
Figure 2: SEM images of gold, palladium and platinum lines formed on a silicon substrate using a PS-b-P2VP copolymer template.
Figure 3: Response of the PS-b-P2VP block copolymer films to acid.
Figure 4: Summary of the chemistry used to produce metallic nanostructures.
Figure 5: Aligned gold and platinum nanostructures with long-range order.

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Acknowledgements

This work was supported by the National Research Council of Canada, the University of Alberta, Natural Sciences and Engineering Research Council (NSERC) and the Canadian Foundation for Innovation. J.C. acknowledges financial support from the Alberta Ingenuity through a studentship fund and an NSERC PGS-D scholarship. X.F. holds an NSERC USRA. We are also thankful for the technical support provided at NINT, the Alberta Centre for Surface Engineering and Science and the Nanofab at the University of Alberta.

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Authors and Affiliations

  1. National Institute for Nanotechnology (NINT), National Research Council, 11421 Saskatchewan Drive, Edmonton, T6G 2M9, Alberta, Canada

    Jinan Chai, Dong Wang, Xiangning Fan & Jillian M. Buriak

  2. Department of Mechanical Engineering, University of Alberta, Edmonton, T6G 2G8, Alberta, Canada

    Jinan Chai

  3. Department of Chemistry, University of Alberta, Edmonton, T6G 2G2, Alberta, Canada

    Xiangning Fan & Jillian M. Buriak

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  1. Jinan Chai
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Contributions

J.C. and J.M.B. conceived and designed the experiments. J.C. performed most of the experiments. J.C. and J.M.B analysed the data. D.W. assisted with the electrical measurement and analysis. X.F. contributed to AFM characterization of polymer flipping. J.C and J.M.B. co-wrote the paper.

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Correspondence to Jillian M. Buriak.

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Chai, J., Wang, D., Fan, X. et al. Assembly of aligned linear metallic patterns on silicon. Nature Nanotech 2, 500–506 (2007). https://doi.org/10.1038/nnano.2007.227

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