Research Highlights | Published:

Nanoelectronics

Rapid writing

Nature Nanotechnology (27 October 2006) | Download Citation

Subjects

Replacing the tunnel barrier in a flash memory device with a series of quantum dots can increase the write speed a thousand-fold

Access optionsAccess options

Rent or Buy article

Get time limited or full article access on ReadCube.

from$8.99

All prices are NET prices.

References

  1. 1.

    Appl. Phys. Lett. (2006). 10.1063/1.2362594

Download references

About this article

Publication history

Published

DOI

https://doi.org/10.1038/nnano.2006.125

Authors

  1. Search for Jessica Thomas in:

Newsletter Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing