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Critical assessment of charge mobility extraction in FETs

Nature Materials volume 17, pages 2–7 (2018)Cite this article

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Mobility is an important charge-transport parameter in organic, inorganic and hybrid semiconductors. We outline some of the common pitfalls of mobility extraction from field-effect transistor (FET) measurements and propose practical recommendations to avoid reporting erroneous mobilities in publications.

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Figure 1: Common nonlinearities in FET transfer characteristics.
Figure 2: Illustration of mobility extraction artefacts in devices with non-ideal characteristics.
Figure 3: FET and Hall effect measurements in single-crystal rubrene OFET.

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Authors and Affiliations

  1. Department of Physics, Rutgers University, 136 Frelinghuysen Road, Piscataway, 08854, New Jersey, USA

    Hyun Ho Choi & Vitaly Podzorov

  2. Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, South Korea

    Hyun Ho Choi & Kilwon Cho

  3. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, 55455, Minnesota, USA

    C. Daniel Frisbie

  4. Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK

    Henning Sirringhaus

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  5. Vitaly Podzorov
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Choi, H., Cho, K., Frisbie, C. et al. Critical assessment of charge mobility extraction in FETs. Nature Mater 17, 2–7 (2018). https://doi.org/10.1038/nmat5035

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