Abstract
The spontaneous Hall effect driven by the quantum Berry phase (which serves as an internal magnetic flux in momentum space) manifests the topological nature of quasiparticles and can be used to control the information flow, such as spin and valley1,2. We report a Hall effect of excitons (fundamental composite particles of electrons and holes that dominate optical responses in semiconductors3). By polarization-resolved photoluminescence mapping, we directly observed the Hall effect of excitons in monolayer MoS2 and valley-selective spatial transport of excitons on a micrometre scale. The Hall angle of excitons is found to be much larger than that of single electrons in monolayer MoS2 (ref. 4), implying that the quantum transport of the composite particles is significantly affected by their internal structures. The present result not only poses a fundamental problem of the Hall effect in composite particles, but also offers a route to explore exciton-based valleytronics in two-dimensional materials.
This is a preview of subscription content, access via your institution
Access options
Access Nature and 54 other Nature Portfolio journals
Get Nature+, our best-value online-access subscription
$29.99 / 30 days
cancel any time
Subscribe to this journal
Receive 12 print issues and online access
$259.00 per year
only $21.58 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
Similar content being viewed by others
References
Xiao, D., Chang, M.-C. & Niu, Q. Berry phase effects on electronic properties. Rev. Mod. Phys. 82, 1959–2007 (2010).
Sinova, J., Valenzuela, S. O., Wunderlich, J., Back, C. H. & Jungwirth, T. Spin Hall effects. Rev. Mod. Phys. 87, 1213–1259 (2015).
Elliott, R. J. Intensity of optical absorption by excitons. Phys. Rev. 108, 1384–1389 (1957).
Mak, K. F., McGill, K. L., Park, J. & McEuen, P. L. The valley Hall effect in MoS2 transistors. Science 344, 1489–1492 (2014).
Hall, E. H. On a new action of the magnet on electric currents. Am. J. Math. 2, 287–292 (1879).
Xiao, D., Liu, G. B., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012).
Strohm, C., Rikken, G. L. J. A. & Wyder, P. Phenomenological evidence for the phonon Hall effect. Phys. Rev. Lett. 95, 155901 (2005).
Onose, Y. et al. Observation of the Magnon Hall effect. Science 329, 297–299 (2010).
Yao, W. & Niu, Q. Berry phase effect on the exciton transport and on the exciton Bose–Einstein condensate. Phys. Rev. Lett. 101, 106401 (2008).
Kuga, S., Murakami, S. & Nagaosa, N. Spin Hall effect of excitons. Phys. Rev. B 78, 205201 (2008).
Yu, H., Liu, G.-B., Gong, P., Xu, X. & Yao, W. Dirac cones and Dirac saddle points of bright excitons in monolayer transition metal dichalcogenides. Nat. Commun. 5, 3876 (2014).
Li, Y.-M. et al. Light-induced exciton spin Hall effect in van der Waals heterostructures. Phys. Rev. Lett. 115, 166804 (2015).
Yu, T. & Wu, M. W. Valley depolarization dynamics and valley Hall effect of excitons in monolayer and bilayer MoS2 . Phys. Rev. B 93, 045414 (2016).
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010).
Zhang, C., Johnson, A., Hsu, C., Li, L. & Shih, C. Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending. Nano Lett. 14, 2443–2447 (2014).
Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotech. 7, 494–498 (2012).
Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotech. 7, 490–493 (2012).
Jones, A. M. et al. Optical generation of excitonic valley coherence in monolayer WSe2 . Nat. Nanotech. 8, 634–638 (2013).
Srivastava, A. et al. Valley Zeeman effect in elementary optical excitations of a monolayer WSe2 . Nat. Phys. 11, 141–147 (2015).
Aivazian, G. et al. Magnetic control of valley pseudospin in monolayer WSe2 . Nat. Phys. 11, 148–152 (2015).
Korn, T., Heydrich, S., Hirmer, M., Schmutzler, J. & Schller, C. Low-temperature photocarrier dynamics in monolayer MoS2 . Appl. Phys. Lett. 99, 2014–2017 (2011).
Mouri, S. et al. Nonlinear photoluminescence in atomically thin layered WSe2 arising from diffusion-assisted exciton–exciton annihilation. Phys. Rev. B 90, 155449 (2014).
Cui, Q., Ceballos, F., Kumar, N. & Zhao, H. Transient absorption microscopy of monolayer and bulk WSe2 . ACS Nano 8, 2970–2976 (2014).
Rivera, P. et al. Valley-polarized exciton dynamics in a 2D semicondcutor heterostructure. Science 351, 688–691 (2016).
Kato, Y. K., Myers, R. C., Gossard, A. C. & Awschalom, D. D. Observation of the spin Hall effect in semiconductors. Science 306, 1910–1913 (2004).
Lee, J., Mak, K. F. & Shan, J. Electrical control of the valley Hall effect in bilayer MoS2 transistors. Nat. Nanotech. 11, 421–425 (2015).
Leyder, C. et al. Observation of the optical spin Hall effect. Nat. Phys. 3, 628–631 (2007).
Mak, K. F. et al. Tightly bound trions in monolayer MoS2 . Nat. Mater. 12, 207–211 (2013).
Xie, L. & Cui, X. Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides. Proc. Natl Acad. Sci. USA 113, 3746–3750 (2016).
Acknowledgements
We thank N. Nagaosa, A. Fujimori, M. Yoshida and F. Qin for helpful discussions. M.O. is supported by Advanced Leading Graduate Course for Photon Science (ALPS). M.O. and Y.Z. were supported by Japan Society for the Promotion of Science (JSPS) through the Research Fellowship for Young Scientists. T.I. was supported by Grant-in-Aid for Research Activity Start-up (No. JP15H06133) and Challenging Research (Exploratory) (No. JP17K18748) from JSPS. This research was supported by Grant-in-Aid for specially promoted research (No. 25000003) from JSPS.
Author information
Authors and Affiliations
Contributions
All authors conceived and designed the research. M.O. and Y.Z. built the measurement system. M.O. performed the measurements and analysed the data. All authors discussed the results and wrote the manuscript.
Corresponding author
Ethics declarations
Competing interests
The authors declare no competing financial interests.
Supplementary information
Supplementary Information
Supplementary Information (PDF 1291 kb)
Rights and permissions
About this article
Cite this article
Onga, M., Zhang, Y., Ideue, T. et al. Exciton Hall effect in monolayer MoS2. Nature Mater 16, 1193–1197 (2017). https://doi.org/10.1038/nmat4996
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1038/nmat4996
This article is cited by
-
Inheritance of the exciton geometric structure from Bloch electrons in two-dimensional layered semiconductors
Frontiers of Physics (2024)
-
Interlayer exciton dynamics of transition metal dichalcogenide heterostructures under electric fields
Nano Research (2024)
-
Recent progress of exciton transport in two-dimensional semiconductors
Nano Convergence (2023)
-
Ultrafast exciton fluid flow in an atomically thin MoS2 semiconductor
Nature Nanotechnology (2023)
-
Polariton condensates for classical and quantum computing
Nature Reviews Physics (2022)