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Layered memristive and memcapacitive switches for printable electronics

Nature Materials volume 14, pages 199–204 (2015)Cite this article

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Abstract

Novel computing technologies that imitate the principles of biological neural systems may offer low power consumption along with distinct cognitive and learning advantages1,2. The development of reliable memristive devices capable of storing multiple states of information has opened up new applications such as neuromorphic circuits and adaptive systems3,4. At the same time, the explosive growth of the printed electronics industry has expedited the search for advanced memory materials suitable for manufacturing flexible devices5. Here, we demonstrate that solution-processed MoOx/MoS2 and WOx/WS2 heterostructures sandwiched between two printed silver electrodes exhibit an unprecedentedly large and tunable electrical resistance range from 102 to 108 Ω combined with low programming voltages of 0.1–0.2 V. The bipolar resistive switching, with a concurrent capacitive contribution, is governed by an ultrathin (<3 nm) oxide layer. With strong nonlinearity in switching dynamics, different mechanisms of synaptic plasticity are implemented by applying a sequence of electrical pulses.

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Figure 1: Solution-processed MoOx/MoS2 memristors on a plastic foil.
Figure 2: Resistive and capacitive switching characteristics of MoOx/MoS2 heterostructures.
Figure 3: Layered memristor response to programming pulses.
Figure 4: Resistance state retention and mechanical endurance.

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Acknowledgements

The authors greatly thank J. Kivioja and I. B. Gartseev (Nokia) for fruitful discussions, R. White and S. Malik (Nokia) for help with supplying materials, and the Center ‘Systems for Microscopy and Analysis’ (Technopark ‘Skolkovo’) for performing SEM and XPS analysis. We also acknowledge technical support and valuable comments from D. Yu. Paraschuk, D. M. Itkis, D. A. Semenenko (MSU) and N. M. Surin, S. A. Ponomarenko (ISPM RAS).

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Authors and Affiliations

  1. Nokia Labs Skolkovo, Nokia Technologies, 100, Novaya Str., Skolkovo, Moscow Region 143025, Russia

    Alexander A. Bessonov, Marina N. Kirikova, Dmitrii I. Petukhov & Marc J. A. Bailey

  2. Department of Chemistry, Lomonosov Moscow State University, Moscow 119991, Russia

    Dmitrii I. Petukhov

  3. Sensor Systems, Nokia Technologies, Cambridge CB3 0FA, UK

    Mark Allen & Tapani Ryhänen

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  1. Alexander A. Bessonov
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  2. Marina N. Kirikova
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  4. Mark Allen
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  5. Tapani Ryhänen
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  6. Marc J. A. Bailey
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Contributions

A.A.B. and M.N.K. discovered the memory effect, formulated the experimental approach, fabricated the samples and performed characterization. D.I.P. and M.A. supported printing experiments, electrical measurements and data analysis. T.R. and M.J.A.B. performed general supervision of the study. A.A.B. prepared the manuscript, with all authors discussing the results and commenting on the manuscript.

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Correspondence to Alexander A. Bessonov.

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The authors declare no competing financial interests.

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Bessonov, A., Kirikova, M., Petukhov, D. et al. Layered memristive and memcapacitive switches for printable electronics. Nature Mater 14, 199–204 (2015). https://doi.org/10.1038/nmat4135

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