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Photonics

Stretching silicon's potential

Nature Materials volume 11, pages 96–97 (2012)Cite this article

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The application of inhomogeneous strain to silicon photonic structures may lead to new optically active devices based on second-order nonlinear processes.

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Figure 1: Schematic of second-harmonic generation in strained silicon waveguides.

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Authors and Affiliations

  1. Center ZIK Sili-nano, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, Halle, 06120, Germany

    Clemens Schriever & Ralf B. Wehrspohn

  2. Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straβe 1, Halle, 06120, Germany

    Ralf B. Wehrspohn

Authors
  1. Clemens Schriever
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  2. Ralf B. Wehrspohn
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Correspondence to Ralf B. Wehrspohn.

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Schriever, C., Wehrspohn, R. Stretching silicon's potential. Nature Mater 11, 96–97 (2012). https://doi.org/10.1038/nmat3226

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