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Towards a magnetoelectric memory

The room-temperature manipulation of magnetization by an electric field using the multiferroic BiFeO3 represents an essential step towards the magnetoelectric control of spintronics devices.

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Figure 1: Sketch of a possible MERAM element.


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Bibes, M., Barthélémy, A. Towards a magnetoelectric memory. Nature Mater 7, 425–426 (2008).

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