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Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching

Abstract

Ferroelectric crystals are characterized by their asymmetric or polar structures. In an electric field, ions undergo asymmetric displacement and result in a small change in crystal dimension, which is proportional to the applied field1,2. Such electric-field-induced strain (or piezoelectricity) has found extensive applications in actuators and sensors2. However, the effect is generally very small and thus limits its usefulness. Here I show that with a different mechanism, an aged BaTiO3 single crystal can generate a large recoverable nonlinear strain of 0.75% at a low field of 200 V mm−1. At the same field this value is about 40 times higher than piezoelectric Pb(Zr, Ti)O3 (PZT) ceramics and more than 10 times higher than the high-strain Pb(Zn1/3Nb2/3)O3–PbTiO3 (PZN-PT) single crystals3,4,5. This large electro-strain stems from an unusual reversible domain switching (most importantly the switching of non-180° domains) in which the restoring force is provided by a general symmetry-conforming property of point defects. This mechanism provides a general method to achieve large electro-strain effect in a wide range of ferroelectric systems and the effect may lead to novel applications in ultra-large stroke and nonlinear actuators.

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Figure 1: Symmetry-conforming property of point defects.
Figure 2: Mechanism of large electro-strain effect by reversible domain switching in aged ferroelectrics due to the symmetry-conforming property of point defects.
Figure 3: Double hysteresis loop (PE curve) of an aged BaTiO3 single crystal, in comparison with the normal bistable hysteresis loop (dotted line) of the unaged crystal of the same sample.
Figure 4: Large recoverable electric field induced strain (ε) in an aged BaTiO3 single crystal along the [001] pseudo-cubic direction, in comparison with the piezoelectric effect of soft PZT ceramics and PZN-PT single crystals.

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Acknowledgements

The author thanks H.S. Luo for providing single crystal samples, D.Z. Sun, K. Otsuka, T. Suzuki, K. Nakamura, L.X. Zhang, W. Chen for helpful discussions, and K. Nishida for EPMA chemical analysis of the samples. This work was supported by Sakigake-21 of JST and a special fund for Cheungkong Professorship and National Natural Science Foundation of China.

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Ren, X. Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching. Nature Mater 3, 91–94 (2004). https://doi.org/10.1038/nmat1051

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