(a) Device structure of a stretchable single transistor. Top, schematic from top surface. Centre, schematic from side, the green box corresponds to an entire OTFT device. Bottom, device picture. Scale bar, 5 mm. (b) Robustness evaluation with different concentrations of curing agent in PDMS 1. (PDMS 1 is patterned on stiff polyimide during the fabrication process of this substrate). Red circles, normalized strain-to-failure; blue squares, normalized failure stress. Error bars represent s.e. (c) Single stretchable transistor mobility dependence on tensile strain. Red circles represent normalized mobility. Scale bars, 3 cm. The inset shows the transistor relaxed (upper) and stretched (100%, lower). (d) Transfer characteristics of a relaxed and stretched single organic transistor corresponding to (c,e) mobility dependence on tensile strain of four transistors in a 2 × 2 stretchable active matrix. Scale bars, 1 cm. The inset shows the device in relaxed (upper) and stretched (110%, lower) configurations. (f) Transfer characteristics of one transistor in a stretchable active matrix corresponding to e.