Figure 2: Effect of electric field on the tunnelling magnetoresistance. | Nature Communications

Figure 2: Effect of electric field on the tunnelling magnetoresistance.

From: Reversible electric-field control of magnetization at oxide interfaces

Figure 2

Tunneling magnetoresistance (TMR) versus magnetic field loop at a temperature of 94 K. Magnetic field was directed in-plane along the [110] direction (easy axis of the harder top layer), according to drawing in a. (b) At low bias (100 mV, blue symbols) the minor loop shows the saturation State (), the high resistance State () due to misalignment of magnetic moments of top and bottom layer, and the low resistance (′) where magnetic moments are aligned along the easy axis of the bottom layer. Notice that high () and low (′) resistance states are stable in zero magnetic field. (c) At the higher bias of 250 mV the major loop (black symbols) does not show the transitions into States and ′. State is the (antiparallel) state of maximum misalignment.

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