(a–d) The membrane is transferred on a 100-μm thick polypropylene foil, which is folded in hand (bending radius is about 750 μm), (scale bar, 1 mm). (b) The electronics is aggressively crumpled in hands. (c) Reflattening after crumpling. (d) The adhesion between the foil and the parylene surface is poor, hence, the strain arising from the substrate is reduced and the membrane can be released in water after the mechanical tests. The experiments are repeated for non-transparent and transparent devices but in the second case the aggressive crumpling provokes cracks and delamination of ITO layer (see Supplementary Fig. S5). (e) Transfer (VD=0.1 V) and output characteristic (VGS from 3–5 with a 0.5 V step) of a non-transparent TFT. The device (W/L=50 μm/4 μm) continues to work after being folded and crumpled. (f,g) After crumpling, six devices out of 10 continue to work. Metal delamination and cracks in the active layers are the cause of failure. Gate leakage, IG, (logarithmic scale in the plot) increases more than one order of magnitude while threshold voltage, VTH, remains quite stable (±150 V in average). Average mobility, μ, is about 15 cm2 V−1s−1 and the change, after the mechanical test, remains in the range of ±2.5 cm2 V−1s−1. Errors bars in the plots indicate the s.d.